Shinya Asami
29Patents
18h-index
17Co-inventors
70Inventor score
Filing activity: Apr 19, 1995 → Dec 3, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6426512B1 | Group III nitride compound semiconductor device | Electricity | 140 | Expired |
| US5959401A | Light-emitting semiconductor device using group III nitride compound | Electricity | 92 | Expired |
| US6342404B1 | Group III nitride compound semiconductor device and method for producing | Electricity | 87 | Expired |
| US6841808B2 | Group III nitride compound semiconductor device and method for producing the same | Electricity | 83 | Expired |
| US6982435B2 | Group III nitride compound semiconductor device and method for producing the same | Electricity | 82 | Expired |
| US6040588A | Semiconductor light-emitting device | Emerging Cross-Sectional Technologies | 78 | Expired |
| US5945689A | Light-emitting semiconductor device using group III nitride compound | Electricity | 72 | Expired |
| US6326236A | Semiconductor light-emitting device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 61 | Expired |
| US5753939A | Light-emitting semiconductor device using a Group III nitride compound and having a contact layer upon which an electrode is formed | Electricity | 60 | Expired |
| US6420733B2 | Semiconductor light-emitting device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 56 | Expired |
| US6541293B2 | Semiconductor light-emitting device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5587593A | Light-emitting semiconductor device using group III nitrogen compound | Electricity | 46 | Expired |
| US6423984B1 | Light-emitting semiconductor device using gallium nitride compound semiconductor | Electricity | 43 | Expired |
| US5650641A | Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device | Electricity | 38 | Expired |
| US6288416A | Light-emitting semiconductor device using group III nitride compound | Electricity | 23 | Expired |
| US6713789B1 | Group III nitride compound semiconductor device and method of producing the same | Electricity | 22 | Expired |
| US6593016B1 | Group III nitride compound semiconductor device and producing method thereof | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6531719B2 | Group III nitride compound semiconductor device | Emerging Cross-Sectional Technologies | 19 | Expired |
| US6821800B2 | Semiconductor light-emitting device and manufacturing method thereof | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6623998B2 | Method for manufacturing group III nitride compound semiconductor device | Emerging Cross-Sectional Technologies | 14 | Expired |
| US6939733B2 | Group III nitride compound semiconductor device and method of producing the same | Electricity | 11 | Expired |
| US6853009B2 | Light-emitting semiconductor device using gallium nitride compound semiconductor | Electricity | 10 | Expired |
| US6872965B2 | Group III nitride compound semiconductor device | Electricity | 9 | Expired |
| US7030414B2 | III group nitride compound semiconductor luminescent element | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6645785B2 | Light-emitting semiconductor device using group III nitride compound | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.