Method of manufacturing annealed films
US5589421A · kind A · utility
16Cited by
12References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 1994 |
| Grant date | Dec 31, 1996 |
| Priority date | — |
| Expiry date | Sep 1, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting device for detecting temperature of the reaction chamber, and an operation control device for receiving signals corresponding to the temperature of the reaction chamber, and supplying to the transportation mechanism, other signals for preventing the silicon wafer from being transported when the temperature is 100.degree. C. or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.