Separation of wafer into die with wafer-level processing

US5597767A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Michael A. Mignardi · Dallas, US
• Laurinda Ng · Plano, US
• Ronald S. Croff · Allen, US
• Robert G. McKenna · Houston, US
• Lawrence D. Dyer · Richardson, US

Key dates

• Filing date: Jan 6, 1995
• Grant date: Jan 28, 1997
• Expiry date: Jan 6, 2015

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/028
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of separating wafers, such as those used for semiconductor device manufacture, into die. A partly fabricated wafer is covered with a protective coating over its top surface (10). The wafer is then inscribed to define separation lines between die, with the separation lines being of a predetermined depth (12). The protective coating is then removed (14), and at least one processing step is performed at the wafer level (15, 22-24), before the inscribed wafer is separated into die. Then, the wafer is separated into die along the separation lines (17).