Method of evaluating a silicon single crystal
US5598452A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1995 |
| Grant date | Jan 28, 1997 |
| Priority date | — |
| Expiry date | Sep 6, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/207
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
According to the invention, it is sought to provide a method of evaluating single crystal of silicon, which permits determination of the amount of precipitated oxygen of even a sample having been heat treated and with unknown initial interstitial oxygen concentration. X-rays radiated from X-ray source 7 is converted by slit 6 into a thin, parallel incident X-ray beam 3 to be incident on sample single crystal 1. After adjusting the angle .theta.1 of sample with respect to the incident X-ray beam such as to satisfy Bragg conditions, diffracted X-rays 4 produced by diffraction on the sample single crystal 1 are coupled from the back side thereof through X-ray receiving slit 8 to scintillator 5 for intensity measurement. The amount of precipitated oxygen is calculated from the measured diffracted X-ray intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.