Hiroshi Takeno
34Patents
8h-index
38Co-inventors
75Inventor score
Filing activity: Jul 21, 1993 → May 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5377266A | Scramble apparatus and descramble apparatus | Electricity | 55 | Expired |
| US6478883B1 | Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them | Electricity | 50 | Expired |
| US5604499A | Variable-length decoding apparatus | Electricity | 34 | Expired |
| US5625355A | Apparatus and method for decoding variable-length code | Electricity | 34 | Expired |
| US5636279A | Scramble apparatus and descramble apparatus | Electricity | 19 | Expired |
| US5568140A | Header detector and associated decoding apparatus | Physics | 18 | Expired |
| US6143071A | Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate | Chemistry; Metallurgy | 15 | Expired |
| US6206961A | Method of determining oxygen precipitation behavior in a silicon monocrystal | Electricity | 9 | Expired |
| US6544490B1 | Silicon wafer and production method thereof and evaluation method for silicon wafer | Electricity | 8 | Expired |
| US6277715A | Production method for silicon epitaxial wafer | Electricity | 7 | Expired |
| US6264906A | Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate | Chemistry; Metallurgy | 7 | Expired |
| US7311888B2 | Annealed wafer and method for manufacturing the same | Electricity | 6 | Expired |
| US7033962B2 | Methods for manufacturing silicon wafer and silicone epitaxial wafer, and silicon epitaxial wafer | Electricity | 4 | Expired |
| US6858094B2 | Silicon wafer and silicon epitaxial wafer and production methods therefor | Electricity | 3 | Expired |
| US8268705B2 | Method for producing SOI wafer | Electricity | 3 | Active |
| US7749861B2 | Method for manufacturing SOI substrate and SOI substrate | Electricity | 2 | Active |
| US7910455B2 | Method for producing SOI wafer | Electricity | 2 | Active |
| US7189293B2 | Method of producing annealed wafer and annealed wafer | Electricity | 2 | Expired |
| US6544332B1 | Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon wafer | Chemistry; Metallurgy | 2 | Expired |
| US5598452A | Method of evaluating a silicon single crystal | Physics | 2 | Expired |
| US7902042B2 | Method of manufacturing SOI wafer and thus-manufactured SOI wafer | Electricity | 1 | Expired |
| US8410573B2 | SOI (silicon on insulator) structure semiconductor device and method of manufacturing the same | Electricity | 1 | Active |
| US7229501B2 | Silicon epitaxial wafer and process for manufacturing the same | Electricity | 1 | Expired |
| US9530702B2 | Method for measuring recombination lifetime of silicon substrate | Physics | 0 | Active |
| US7985660B2 | Method for manufacturing soi wafer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.