Method of forming green light emitting diode in silicon carbide
US5604135A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1994 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Aug 12, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
Abstract
A light emitting diode is disclosed that emits in the green portion of the visible spectrum, along with a method of producing the diode. The light emitting diode comprises a 6H silicon carbide substrate having a planar surface inclined more than one degree off axis toward one of the <11 20> directions; an ohmic contact to the substrate; a first epitaxial layer of 6H silicon carbide on the inclined surface of the substrate and having a first conductivity type; a second epitaxial layer of 6H silicon carbide on the first layer and having the opposite conductivity type for forming a p-n junction between the first and second layers; and an ohmic contact to the second epitaxial layer. The diode produces a peak wavelength of between about 525 and 535 nanometers with a spectral half width of no more than about 90 nanometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.