Method of generating plasma having high ion density for substrate processing operation
US5605599A · kind A · utility
15Cited by
15References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1995 |
| Grant date | Feb 25, 1997 |
| Priority date | — |
| Expiry date | Feb 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An induction plasma source for integrated circuit fabrication includes a hemispherically shaped induction coil in an expanding spiral pattern about the vacuum chamber containing a semiconductor wafer supported by a platen. The windings of the induction coil follow the contour of a hemispherically shaped quartz bell jar, which holds the vacuum. The power source is a low frequency rf source having a frequency of about 450 KHz and a power in the range of 200-2000 Watts, and the pressure is a low pressure of about 0.1-100 mTorr. A high frequency rf source independently adjusts the bias voltage on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.