Patent · US Expired

Scanning electron microscope

US5608218A · kind A · utility

43Cited by
12References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 20, 1994
Grant dateMar 4, 1997
Priority date
Expiry dateDec 20, 2014

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/281
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A scanning electron microscope suitable for producing an image of high resolution by detecting secondary electrons and backscattered electrons generated from a specimen at a low accelerating voltage in a separate or synthesis fashion. In the scanning electron microscope electric and magnetic fields for separating trajectories of backscattered electrons and secondary electrons generated from a specimen are established, and a backscattered electron detector for detecting generated backscattered electrons is disposed on the trajectory of the backscattered electrons. According to the microscope, since secondary electrons and backscattered electrons can be detected efficiently in a separate fashion even at a low accelerating voltage of several kilovolts or less and besides the detector does not exert the deflection action on a primary electron beam, backscattered and secondary electron images of high resolution can be obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.