Semiconductor device manufacturing apparatus and its cleaning method
US5609721A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 1995 |
| Grant date | Mar 11, 1997 |
| Priority date | — |
| Expiry date | Jan 3, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for manufacturing a semiconductor device includes a reaction chamber adapted to exhaust gas therefrom, and a cleaning gas supplying system for introducing cleaning gas containing ClF.sub.3 into the reaction chamber, the system having a plurality of gas blowout holes formed in the flow direction of gas at least in the reaction chamber. The reaction chamber may be a tubular chamber, and the cleaning gas supplying system may be a tube extending from one end to the other end of the reaction chamber along the inner wall or the central axis of the reaction chamber, a plurality of through holes being formed in the side wall of the tube. Damages to the inner surface of the reaction chamber of the semiconductor device manufacturing apparatus can be suppressed and a film attached to the inner wall of the reaction chamber can be removed in a short time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.