Method of making back gate contact for silicon on insulator technology

US5610083A · kind A · utility

Assignee

• Chartered Semiconductor Manufacturing LTD · SG

Inventors

• Lap Chan · Anaheim, US
• Ravis H. Sundaresan · Plano, US
• Che-Chia Wei · Plano, US

Key dates

• Filing date: May 20, 1996
• Grant date: Mar 11, 1997
• Expiry date: May 20, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A process for creating a back gate contact, in an SOI layer, that can easily be incorporated into a MOSFET fabrication recipe, has been developed. The back gate contact consists of a etched trench, lined with insulator, and filled with doped polysilicon. The polysilicon filled trench electrically connects the semiconductor substrate to overlying metal contacts.