Lap Chan
21Patents
13h-index
24Co-inventors
81Inventor score
Filing activity: Dec 4, 1995 → Aug 20, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5728621A | Method for shallow trench isolation | Electricity | 112 | Expired |
| US5731239A | Method of making self-aligned silicide narrow gate electrodes for field effect transistors having low sheet resistance | Electricity | 109 | Expired |
| US5744376A | Method of manufacturing copper interconnect with top barrier layer | Electricity | 90 | Expired |
| US5710070A | Application of titanium nitride and tungsten nitride thin film resistor for thermal ink jet technology | Performing Operations; Transporting | 81 | Expired |
| US5610083A | Method of making back gate contact for silicon on insulator technology | Electricity | 71 | Expired |
| US5602053A | Method of making a dual damascene antifuse structure | Electricity | 71 | Expired |
| US5618384A | Method for forming residue free patterned conductor layers upon high step height integrated circuit substrates using reflow of photoresist | Electricity | 47 | Expired |
| US5705849A | Antifuse structure and method for manufacturing it | Electricity | 36 | Expired |
| US5627094A | Stacked container capacitor using chemical mechanical polishing | Electricity | 33 | Expired |
| US5677238A | Semiconductor contact metallization | Electricity | 18 | Expired |
| US5900672A | Barrier layer | Electricity | 18 | Expired |
| US5808855A | Stacked container capacitor using chemical mechanical polishing | Electricity | 17 | Expired |
| US6777774B2 | Low noise inductor using electrically floating high resistive and grounded low resistive patterned shield | Electricity | 13 | Expired |
| US5652152A | Process having high tolerance to buried contact mask misalignment by using a PSG spacer | Electricity | 12 | Expired |
| US6188135A | Copper interconnect with top barrier layer | Electricity | 11 | Expired |
| US5624871A | Method for making electrical local interconnects | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5792708A | Method for forming residue free patterned polysilicon layers upon high step height integrated circuit substrates | Electricity | 9 | Expired |
| US5742088A | Process having high tolerance to buried contact mask misalignment by using a PSG spacer | Electricity | 9 | Expired |
| US5693178A | Electrical test structure to quantify microloading after plasma dry etching of metal film | Electricity | 2 | Expired |
| US6307248A | Definition of anti-fuse cell for programmable gate array application | Emerging Cross-Sectional Technologies | 0 | Expired |
| US11448373B1 | Photosensitive candle | Mechanical Engineering; Lighting; Heating | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.