Method of fabricating semiconductor devices and the devices
US5612232A · kind A · utility
23Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1996 |
| Grant date | Mar 18, 1997 |
| Priority date | — |
| Expiry date | Mar 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A method of fabricating a semiconductor device including forming a Schottky contact on the surface of a substrate by patterning a layer of nickel to define a contact and annealing the nickel below approximately 600.degree. C. A trench is etched around the Schottky contact utilizing the Schottky contact as an etch mask and inert ions are implanted in the trench to form a damage region. The trench is passivated with a dielectric layer. An ohmic contact can be formed on the reverse side of the substrate prior to formation of the Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.