Buried layer contact for an integrated circuit structure
US5614750A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1995 |
| Grant date | Mar 25, 1997 |
| Priority date | — |
| Expiry date | Jun 29, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A buried layer contact for a integrated circuit structure is provided, with particular application for a contact for a buried collector of a bipolar transistor. The buried layer contact takes the form of a sinker comprising a fully recessed trench isolated structure having dielectric lined sidewalls and filled with conductive material, e.g. doped polysilicon which contacts the buried layer. The trench isolated contact is more compact than a conventional diffused sinker structure, and thus beneficially allows for reduced transistor area. Advantageously, a reduced area sinker reduces the parasitic capacitance and power dissipation. In a practical implementation, the structure provides for an annular collector contact structure to reduce collector resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.