Multi quantum well semiconductor laser and optical communication system using the same
US5621747A · kind A · utility
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5Claims
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Key dates
| Filing date | Dec 29, 1994 |
| Grant date | Apr 15, 1997 |
| Priority date | — |
| Expiry date | Dec 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2302/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 .mu.m to 1.33 .mu.m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.