High density selective SiO.sub.2 :Si.sub.3 N.sub.4 etching using a stoichiometrically altered nitride etch stop
US5622596A · kind A · utility
20Cited by
6References
5Claims
0Family size
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Key dates
| Filing date | May 8, 1995 |
| Grant date | Apr 22, 1997 |
| Priority date | — |
| Expiry date | May 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Selectivity of SiO.sub.2 to Si.sub.3 N.sub.4 is increased with the additional of silicon rich nitride conformal layer to manufacturing of semiconductor chip. Silicon rich nitride conformal layer may be used in place of or in addition to standard nitride conformal layers in manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.