System for constant field erasure in a flash EPROM
US5629893A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1996 |
| Grant date | May 13, 1997 |
| Priority date | — |
| Expiry date | Apr 18, 2016 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A FLASH EPROM cell in accordance with the present invention is disclosed in which the erasure is accomplished under a constant electric field. The FLASH EPROM cell includes a semiconductor device including a source, a drain and a gate and a constant current circuit coupled to the source. The constant current circuit ensures that a constant field is applied to the tunneling oxide of the FLASH EPROM cell during erasure thereof. In so doing, the FLASH EPROM cell can be erased with a minimum of stress to the device. In addition, the FLASH EPROM cell of the present invention can be used with various power supplies without affecting the characteristics thereof. Finally, through the FLASH EPROM cell of the present invention, the short channel effect associated with smaller device sizes can be substantially reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.