Sensor comprising multilayer substrate
US5631422A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | May 20, 1997 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor includes a first silicon layer, and a sensor element including at least one electrode structured from the first silicon layer. The sensor also includes at least one connecting element also structured from the first silicon layer. The connecting element has a doping less than the doping of the electrode. The sensor comprises at least one conductor track on the first silicon layer routed over the connecting element and coupled to the sensor element for supplying an external signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.