Method of forming a boron-doped diamond film by chemical vapor deposition
US5635258A · kind A · utility
53Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1995 |
| Grant date | Jun 3, 1997 |
| Priority date | — |
| Expiry date | Apr 3, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/278
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming boron-doped diamond film by, chemical vapor deposition (CVD) utilizing two-component system reactant gas doped with trimethyl borate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.