Focused ion beam deposition using TMCTS
US5639699A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 1995 |
| Grant date | Jun 17, 1997 |
| Priority date | — |
| Expiry date | Apr 11, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, perfor…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.