Chemical vapor deposition process for fabricating layered superlattice materials
US5648114A · kind A · utility
49Cited by
27References
16Claims
0Family size
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Key dates
| Filing date | Jul 12, 1993 |
| Grant date | Jul 15, 1997 |
| Priority date | — |
| Expiry date | Jul 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate is prebaked in an oxygen furnace. A thin film of layered superlattice oxide is formed on the substrate by a chemical vapor deposition process. The film is RTP baked to provide grains with a mixed phase of A-axis and C-axis orientation. The film may be treated by ion implantation prior to the RTP bake and oxygen furnace annealed after the RTP bake. An electrode is deposited on the layered superlattice thin film and then the film and electrode are oxygen furnace annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.