Programmable element in barrier metal device
US5648678A · kind A · utility
11Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1994 |
| Grant date | Jul 15, 1997 |
| Priority date | — |
| Expiry date | Sep 21, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit 10 has a programmable Zener diode with diffusion regions 18 and 16 and metal contacts 34 and 32. A barrier metal 30 is disposed between one contact 32 and the substrate 12; another contact region 18 has no barrier metal on its surface. A polysilicon layer 22 is self-aligned with surface regions 18 and diffusion region 18. A silicide layer 128 may be used on the polysilicon layer 22 and on surface region 18.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.