Method for production of SOI substrate
US5650353A · kind A · utility
39Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 21, 1995 |
| Grant date | Jul 22, 1997 |
| Priority date | — |
| Expiry date | Nov 21, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
SOI (silicon-on-insulator) substrates are efficiently produced by a method which comprises superposing and bonding at least three single crystal silicon wafers through the medium of a SiO.sub.2 film formed on the surface of each of the wafers and cutting the bonded wafers along planes perpendicular to the direction of superposition thereof. The cutting can be infallibly attained with high dimensional accuracy without entailing such adverse phenomena as the vibration of the blade of a cutting tool by providing at the portions destined to be cut the grooves for guiding the blade of the cutting tool in advance of the cutting work.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.