Kiyoshi Mitani
61Patents
20h-index
48Co-inventors
88Inventor score
Filing activity: Nov 25, 1980 → Apr 10, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6372609B1 | Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method | Electricity | 270 | Expired |
| US6596610B1 | Method for reclaiming delaminated wafer and reclaimed delaminated wafer | Emerging Cross-Sectional Technologies | 62 | Expired |
| USD396869S | Television camera | General | 60 | Expired |
| USD414867S | Dental camera | General | 59 | Expired |
| US6140210A | Method of fabricating an SOI wafer and SOI wafer fabricated thereby | Electricity | 57 | Expired |
| US6284628A | Method of recycling a delaminated wafer and a silicon wafer used for the recycling | Emerging Cross-Sectional Technologies | 45 | Expired |
| US5478408A | SOI substrate and manufacturing method therefor | Emerging Cross-Sectional Technologies | 44 | Expired |
| US6004866A | Method for manufacturing bonded wafer and bonded wafer manufactured thereby | Electricity | 44 | Expired |
| US6245645A | Method of fabricating an SOI wafer | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6312797A | Method for manufacturing bonded wafer and bonded wafer | Emerging Cross-Sectional Technologies | 42 | Expired |
| US5514235A | Method of making bonded wafers | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6284629A | Method of fabricating an SOI wafer and SOI wafer fabricated by the method | Emerging Cross-Sectional Technologies | 40 | Expired |
| US5650353A | Method for production of SOI substrate | Emerging Cross-Sectional Technologies | 39 | Expired |
| USD390244S | Television camera | General | 29 | Expired |
| US6362076B1 | Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatment | Electricity | 28 | Expired |
| US7052974B2 | Bonded wafer and method of producing bonded wafer | Electricity | 25 | Expired |
| USD398008S | Speaker box | General | 24 | Expired |
| US6566233B2 | Method for manufacturing bonded wafer | Electricity | 21 | Expired |
| US6846718B1 | Method for producing SOI wafer and SOI wafer | Emerging Cross-Sectional Technologies | 21 | Expired |
| US7084046B2 | Method of fabricating SOI wafer | Electricity | 21 | Expired |
| US6461939B1 | SOI wafers and methods for producing SOI wafer | Electricity | 18 | Expired |
| US6884696B2 | Method for producing bonding wafer | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6720640B2 | Method for reclaiming delaminated wafer and reclaimed delaminated wafer | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6902988B2 | Method for treating substrates for microelectronics and substrates obtained by said method | Emerging Cross-Sectional Technologies | 15 | Expired |
| US6239004A | Method of forming oxide film on an SOI layer and method of fabricating a bonded wafer | Electricity | 14 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.