Semiconductor laser device and method for fabricating the same and strained quantum well crystal and method for fabricating the same
US5652762A · kind A · utility
3Cited by
1References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 28, 1995 |
| Grant date | Jul 29, 1997 |
| Priority date | — |
| Expiry date | Aug 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.