Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers
US5655951A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Aug 12, 1997 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0683
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention is a method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers. A desired polishing rate is selected based upon a set of operating parameters for a specific wafer. The set of operating parameters may be different from those of previously planarized wafers. A desired change in the thickness of the pad material is estimated for reconditioning the pad to achieve a desired polishing rate. The estimate of the desired change in pad thickness is based upon the desired polishing rate and a predetermined correlation between wafer polishing rates and changes in pad thickness per conditioning cycle. A layer of material having a thickness substantially equal to the desired change in thickness is then removed from the planarizing surface to create a new planarizing surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.