Method of manufacturing a semiconductor device
US5658811A · kind A · utility
38Cited by
9References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1995 |
| Grant date | Aug 19, 1997 |
| Priority date | — |
| Expiry date | Mar 17, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device is disclosed. After an insulating film having an opening is formed on a first thin tungsten film, an impurity is introduced into the substrate through the opening to form a punch-through stopper between a source and a drain. Then, on the first tungsten film inside the opening, a second tungsten film is selectively deposited to form a gate electrode. With this method, it is possible to easily fabricate high-speed MOSFETs whose channel length is less than half a micron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.