Chemical mechanical polishing endpoint process control
US5659492A · kind A · utility
35Cited by
8References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1996 |
| Grant date | Aug 19, 1997 |
| Priority date | — |
| Expiry date | Mar 19, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.