Process for depositing diamond by chemical vapor deposition
US5660894A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 16, 1995 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Oct 16, 2015 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/277
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a process for depositing diamond by chemical vapor deposition without using conventionally-used hydrogen, which is an explosive gas, as a reaction gases. The process includes contacting a substrate with a two-component gas mixture, under the conditions of a substrate temperature of 150.degree. C.-900.degree. C., a pressure of 1-50 torr, an input microwave power of 250-450 W. The two-component gas mixture is a hydrocarbon (C.sub.x H.sub.y) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y to CO.sub.2 of 0.2-0.8, or a gasified liquid state oxygen-containing hydrocarbon (C.sub.x H.sub.y O.sub.z) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y O.sub.z to CO.sub.2 of 12-17. High quality diamond can be obtained even at low temperature of 180.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.