Non-volatile semiconductor memory device and method of manufacturing the same
US5661056A · kind A · utility
Assignees
Inventor
Key dates
| Filing date | Sep 25, 1995 |
| Grant date | Aug 26, 1997 |
| Priority date | — |
| Expiry date | Sep 25, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A tunnel oxide film is formed on the surface of a p-type silicon substrate, and a floating gate electrode made from a polysilicon film is formed on the surface of the tunnel oxide film. On the surface of the floating gate electrode, a control gate electrode is formed via an NON film formed by sequentially stacking a silicon nitride film, a silicon oxide film, and a silicon nitride film. A side oxide film is formed on the side surfaces of the floating gate electrode and the control gate electrode. Source and drain regions made from an n-type diffused layer are formed on the surfaces of element regions of the silicon substrate on the two sides of the floating gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.