Nobuyoshi Takeuchi
52Patents
15h-index
38Co-inventors
84Inventor score
Filing activity: Sep 9, 1991 → Jul 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5424006A | Phosphorescent phosphor | Chemistry; Metallurgy | 162 | Expired |
| US5886927A | Nonvolatile memory device with verify function | Physics | 87 | Expired |
| US9016900B2 | Light bulb shaped lamp and lighting apparatus | Electricity | 68 | Active |
| US5661056A | Non-volatile semiconductor memory device and method of manufacturing the same | Emerging Cross-Sectional Technologies | 53 | Expired |
| US5684739A | Apparatus and method for determining current or voltage of a semiconductor device | Physics | 36 | Expired |
| US5766997A | Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions | Electricity | 34 | Expired |
| US5686022A | Phosphorescent phosphor | Chemistry; Metallurgy | 32 | Expired |
| US5907183A | Non-volatile semiconductor memory device | Emerging Cross-Sectional Technologies | 30 | Expired |
| US8858027B2 | Light bulb shaped lamp and lighting apparatus | Electricity | 25 | Active |
| US5220166A | Information reading method | Physics | 20 | Expired |
| US9732930B2 | Light bulb shaped lamp | Electricity | 17 | Active |
| US8981636B2 | Lamp having improved insulation of the circuit unit | Mechanical Engineering; Lighting; Heating | 17 | Active |
| US5641696A | Method of forming diffusion layer and method of manufacturing nonvolatile semiconductor memory device | Electricity | 16 | Expired |
| US9285104B2 | Light bulb shaped lamp and lighting apparatus | Electricity | 16 | Active |
| US6005805A | Nonvolatile semiconductor device with a verify function | Physics | 16 | Expired |
| USD664682S1 | Light-emitting diode lamp | General | 15 | Active |
| US5936492A | Ribbon, bonding wire and microwave circuit package | Electricity | 14 | Expired |
| US8587011B2 | Light-emitting device, light-emitting module, and lamp | Electricity | 14 | Active |
| US5936277A | MOS transistor with impurity-implanted region | Electricity | 13 | Expired |
| US5898614A | Non-volatile semiconductor memory device | Physics | 12 | Expired |
| US5394154A | High-frequency signal generator and radar module | Electricity | 11 | Expired |
| US5815433A | Mask ROM device with gate insulation film based in pad oxide film and/or nitride film | Electricity | 11 | Expired |
| USD646811S1 | Light emitting diode lamp | General | 9 | Expired |
| USD646810S1 | Light emitting diode lamp | General | 9 | Expired |
| US8421111B2 | Light-emitting device and lamp | Electricity | 9 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.