Patent · US Expired

Method for the stabilization of halogen-doped films through the use of multiple sealing layers

US5661093A · kind A · utility

320Cited by
2References
34Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 12, 1996
Grant dateAug 26, 1997
Priority date—
Expiry dateSep 12, 2016

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method and apparatus for depositing a halogen-doped oxide film having a low dielectric constant that is resistant to moisture absorption and outgassing of the halogen dopant, and that retains these qualities despite subsequent processing steps. The method begins by introducing process gases (including a halogen-containing source gas) into a processing chamber. A halogen-doped layer is then deposited. The combination of process gases is then changed and a sealing layer deposited which seals the dopant into the halogen-doped layer. The sealing layer may, for example, be a carbon-rich layer or an undoped layer. These steps are repeated until the film reaches a selected thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.