Method for generating proximity correction features for a lithographic mask pattern
US5663893A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 1995 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | May 3, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for synthesizing correction features for an entire mask pattern that initially divides mask pattern data into tiles of data--each tile representing an overlapping section of the original mask pattern. Each of the tiles of data is sequentially processed through correction feature synthesis phases--each phase synthesizing a different type of correction feature. All of the correction features are synthesized for a given tile before synthesizing the correction features for the next tile. Each correction feature synthesis phase formats the data stored in the tile into a representation that provides information needed to synthesize the correction feature for the given phase. Methods for implementing edge bar and serif correction features synthesis phases are also described. The method for synthesizing external type edge bars is performed by oversizing feature data in the tile by an amount equal to the desired spacing of the external edge bar, formatting the oversized data into an edge representation and expanding each of the edges in the edge representation of the oversized data into edge bars having a predetermined width. Internal type of edge bars for the tile are synthesized …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.