Semiconductor laser
US5663974A · kind A · utility
5Cited by
1References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1995 |
| Grant date | Sep 2, 1997 |
| Priority date | — |
| Expiry date | Nov 8, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3409
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser of the present invention includes: a Zn.sub.1-X Cd.sub.X Se active layer (0<X.ltoreq.0.3); a pair of optical confinement structures for interposing the Zn.sub.1-x Cd.sub.X Se active layer therebetween; and a pair of cladding layers for interposing the optical confinement structures and the Zn.sub.1-X Cd.sub.X Se active layer therebetween, wherein an energy band gap of the optical confinement structure monotonously increases as a distance from the Zn.sub.1-X Cd.sub.X Se active layer increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.