Method for the preparation of a single crystal of silicon with decreased crystal defects
US5667584A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1995 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Nov 30, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangement of the cooling zone of the single crystal growing puller to have such a temperature distribution that the time taken by the growing single crystal to pass through the temperature range from the melting point of silicon to 1200.degree. C. is from 50 minutes to 200 minutes and the time taken by the growing single crystal to pass through the temperature range from 1200.degree. C. to 1000.degree. C. does not exceed 130 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.