Method for forming a single crystal semiconductor on a substrate
US5667586A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 1996 |
| Grant date | Sep 16, 1997 |
| Priority date | — |
| Expiry date | Apr 1, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.