Inventor · Apex, NC, US

Adrian Powell

30Patents
15h-index
45Co-inventors
81Inventor score

Filing activity: Oct 29, 1993 → Dec 17, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US5461243A Substrate for tensilely strained semiconductor Electricity 272 Expired
US5759898A Production of substrate for tensilely strained semiconductor Electricity 180 Expired
US5667586A Method for forming a single crystal semiconductor on a substrate Emerging Cross-Sectional Technologies 48 Expired
US7422634B2 Three inch silicon carbide wafer with low warp, bow, and TTV Emerging Cross-Sectional Technologies 45 Active
US7314520B2 Low 1c screw dislocation 3 inch silicon carbide wafer Emerging Cross-Sectional Technologies 33 Expired
US7314521B2 Low micropipe 100 mm silicon carbide wafer Electricity 28 Expired
US9200381B2 Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface Emerging Cross-Sectional Technologies 26 Expired
US7316747B2 Seeded single crystal silicon carbide growth and resulting crystals Electricity 25 Expired
US7294324B2 Low basal plane dislocation bulk grown SiC wafers Electricity 24 Expired
US9790619B2 Method of producing high quality silicon carbide crystal in a seeded growth system Emerging Cross-Sectional Technologies 23 Active
US8980445B2 One hundred millimeter SiC crystal grown on off-axis seed Chemistry; Metallurgy 22 Active
US8384090B2 Low 1C screw dislocation 3 inch silicon carbide wafer Emerging Cross-Sectional Technologies 22 Active
US5563428A Layered structure of a substrate, a dielectric layer and a single crystal layer Emerging Cross-Sectional Technologies 20 Expired
US7192482B2 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals Emerging Cross-Sectional Technologies 19 Expired
US7601441B2 One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer Emerging Cross-Sectional Technologies 18 Expired
US7351286B2 One hundred millimeter single crystal silicon carbide wafer Emerging Cross-Sectional Technologies 15 Expired
US8147991B2 One hundred millimeter single crystal silicon carbide wafer Emerging Cross-Sectional Technologies 14 Active
US7300519B2 Reduction of subsurface damage in the production of bulk SiC crystals Chemistry; Metallurgy 11 Expired
US7563321B2 Process for producing high quality large size silicon carbide crystals Chemistry; Metallurgy 11 Expired
US8785946B2 Low 1C screw dislocation 3 inch silicon carbide wafer Emerging Cross-Sectional Technologies 10 Active
US9099377B2 Micropipe-free silicon carbide and related method of manufacture Emerging Cross-Sectional Technologies 9 Active
US8410488B2 Micropipe-free silicon carbide and related method of manufacture Emerging Cross-Sectional Technologies 9 Active
US8618552B2 Low micropipe 100 mm silicon carbide wafer Electricity 9 Active
US8866159B1 Low micropipe 100 mm silicon carbide wafer Electricity 6 Active
US7364617B2 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals Emerging Cross-Sectional Technologies 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.