Method of forming integrated CMP stopper and analog capacitor
US5670410A · kind A · utility
41Cited by
6References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 25, 1996 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Sep 25, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An analog capacitor is formed as part of an integrated circuit, using normal manufacturing methods, and then the upper electrode of this capacitor is used as part of the end point detection scheme during chem.-mech. polishing (CMP). Said upper electrode is formed from polysilicon and as soon as its upper surface is exposed as a result of the CMP, the presence of silicon particles in the removed material is readily detected by one of several possible methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.