Metal oxide capacitor with a WN.sub.X electrode

US5670808A · kind A · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Kazuya Nishihori · Oshima, JP
• Yoshiaki Kitaura · Kawasaki, JP
• Yoshikazu Tanabe · Iruma, JP
• Tomonori Aoyama · Shizuoka, JP
• Kyoichi Suguro · Yokohama, JP
• Kumi Okuwada · Kawasaki, JP
• Shuichi Komatsu · Yokohama, JP
• Kazuhide Abe · Tokyo, JP

Key dates

• Filing date: Jan 25, 1996
• Grant date: Sep 23, 1997
• Expiry date: Jan 25, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/813

Abstract

A semiconductor device in which an SiO.sub.2 film and a first wiring layer are arranged in this order on a GaAs substrate. A capacitor is formed on the first wiring layer. The capacitor includes a lower electrode which has a multi-layer structure consisting of a Ti layer, an Mo layer, and a Pt layer in this order from underside. The capacitor also includes a dielectric film made of strontium titanate. The capacitor further includes an upper electrode which has a multi-layer structure consisting of a WN.sub.x layer (120 um) and a W layer (300 nm) in this order from underside. That surface of the upper electrode, which is in contact with the dielectric film, is defined by the tungsten nitride layer.