Field effect transistor having contact layer of transistor gate electrode material
US5670812A · kind A · utility
27Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1995 |
| Grant date | Sep 23, 1997 |
| Priority date | — |
| Expiry date | Sep 29, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/903
Abstract
Improved field effect transistor (FET) structures are described. They include a thin film transistor (TFT), wherein a contact layer directly connects a diffusion region of the TFT to an active site of another device, e.g., another transistor. This invention is especially suitable for TFT's which are built on one or more conductive studs. Static random access memory (SRAM) cells incorporating one or more of the TFT's are also described. Moreover, this invention is directed to methods for preventing or alleviating the problems associated with gouging during formation of contact layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.