Method for making selective subcollector heterojunction bipolar transistors
US5672522A · kind A · utility
21Cited by
21References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1996 |
| Grant date | Sep 30, 1997 |
| Priority date | — |
| Expiry date | Mar 5, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/072
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an HBT in which the subcollector-base junction, which contributes to the base-collector capacitance of the device, is reduced by using a selective subcollector. In particular, subcollector areas of the device that do not contribute to collector resistance reduction are eliminated, thereby reducing the subcollector area, which, in turn, reduces the base-collector capacitance. As such, the maximum power-gain frequency f.sub.max is increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.