Vacuum processing method and apparatus
US5673750A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1995 |
| Grant date | Oct 7, 1997 |
| Priority date | — |
| Expiry date | Jun 2, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67103
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to a vacuum processing method and apparatus. When a sample is plasma processed under a reduced pressure, a sample bed is cooled by a cooling medium kept at a predetermined temperature lower than an etching temperature, the sample is held on the sample bed, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. Before the step of holding the sample on the sample bed and supplying the heat transfer gas, heat transfer gas remaining upstream and downstream of the flow rate regulator in the supply line for the heat transfer gas is vacuum exhausted. This is accomplished using a bypass line connected upstream and downstream of the flow rate regulator and an arrangement of appropriate valves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.