Method for producing a semiconductor device by the use of an implanting step

US5674765A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Kurt Rottner · Sollentuna, SE
• Adolf Schöner · Hässelby, SE

Key dates

• Filing date: Apr 24, 1996
• Grant date: Oct 7, 1997
• Expiry date: Apr 24, 2016

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/931

Abstract

A method for producing a semiconductor device comprising a step a) of implanting an impurity dopant of a first conductivity type into said semiconductor layer (1) being doped according to a second opposite conductivity type for forming a first type doped surface layer (2) surrounded, except for the top surface thereof, by second conductivity type doped regions (3) of said semiconductor layer for forming a pn-junction (4) at the interface thereto. A highly doped additional semiconductor layer (5) is grown on top of said surface layer (2) for forming a contact layer allowing a low resistance ohmic contact to be established to the device so created.