Semiconductor contact metallization
US5677238A · kind A · utility
18Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1996 |
| Grant date | Oct 14, 1997 |
| Priority date | — |
| Expiry date | Apr 29, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76885
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an improved connection between active device regions in silicon, to an overlying metallization level, has been developed. The method produces contacts with superior and improved barrier integrity, which permits silicon device exposure to extended thermal process times and/or higher temperature processes without metal penetration into the silicon contact junction regions. The critical element is the addition of a conformal CVD tungsten layer in the multilayer barrier structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.