Method of in situ cleaning a vacuum plasma processing chamber
US5679215A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 1996 |
| Grant date | Oct 21, 1997 |
| Priority date | — |
| Expiry date | Jan 2, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Surfaces having semiconductor oxides, metal oxides and hydrocarbons deposited thereon in a vacuum plasma processing chamber are in situ cleaned by introducing water vapor and SF.sub.6 and/or NF.sub.3 gas in the presence of a plasma discharge. The vapor and gas react to form gaseous HF, and an acidic gas including at least one of H.sub.2 SO.sub.4 and HNO.sub.3. The discharge ionizes and dissociates the HF and acidic gases to form gaseous reactants for the deposits. The reactants chemically react with the deposits, including the oxides and hydrocarbons, to vaporize these deposits. The vaporized deposits are pumped out of the chamber by the same pump which normally evacuates the chamber to a vacuum. Oxygen and/or H.sub.2 O.sub.2 vapors are introduced in the presence of the plasma to additionally clean the surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.