Method of fabricating semiconductor device and semiconductor device fabricated thereby
US5682045A · kind A · utility
6Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Sep 8, 1995 |
| Grant date | Oct 28, 1997 |
| Priority date | — |
| Expiry date | Sep 8, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An Si-doped AlInAs layer and an intrinsic AlInAs layer are successively grown on a semi-insulating InP substrate in a molecular beam epitaxy chamber. The sample is then heat-treated in a nitrogen ambient at 400.degree. C. for 18 minutes so that electrical characteristics of the sample are deteriorated because of the infiltration of fluorine into the Si-doped AlInAs layer. The sample is then placed in the molecular beam epitaxy chamber and reheat-treated in an ultra-high vacuum at 400.degree. C. for seven minutes and the fluorine is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.