Plasma processing apparatus
US5683537A · kind A · utility
65Cited by
4References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 4, 1994 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Oct 4, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes an air-tight chamber consisting of a conductive material, which is grounded, a susceptor provided in the air-tight chamber, for supporting a wafer to be processed, and an RF antenna constituted by a flat coil which is provided in the air-tight chamber to oppose, at a predetermined gap, the wafer which is mounted on the susceptor. A process gas is supplied into the chamber, and an RF power is applied to the RF antenna to generate a plasma between the antenna and the wafer, thereby processing the wafer with the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.