Reactive ion etched assisted gold post process
US5683936A · kind A · utility
1Cited by
13References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1995 |
| Grant date | Nov 4, 1997 |
| Priority date | — |
| Expiry date | Jan 27, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process to fabricate a specified height and cross-section of Microwave Monolithic Integrated Circuit gold posts comprising a patterned conductive substrate overlayed by an adhesive layer, a matrix layer, and a photoresist layer. Using photolithographic techniques, gold post locations are defined in the photoresist layer. m Gold post locations and cross-sections are defined in the matrix layer. The adhesive layer at the gold post locations is removed. The gold post locations are plated to form gold posts. The matrix is etched and the adhesive is dissolved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.