Plasma processing apparatus and method
US5685942A · kind A · utility
52Cited by
3References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 1, 1995 |
| Grant date | Nov 11, 1997 |
| Priority date | — |
| Expiry date | Dec 1, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32697
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus comprises a chamber for storing an object, a gas supply unit for supplying processing gas into the chamber, and high-frequency antenna, provided at least either the inside or outside of the chamber to oppose the object, for generating processing gas supplied into the chamber for processing the object, a high-frequency power source for supplying high-frequency power to the high-frequency antenna, and an electrode, provided to oppose the object and to be insulated from the high-frequency antenna and set at a reference potential, for providing a uniform electric field above the object.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.