Microwave plasma deposition source and method of filling high aspect-ratio features on a substrate
US5688382A · kind A · utility
40Cited by
20References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 1995 |
| Grant date | Nov 18, 1997 |
| Priority date | — |
| Expiry date | Aug 31, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma deposition source including a vacuum chamber for containing a substance to be energized in a plasma with microwave energy, a coaxial microwave feed ending in the chamber, a sputter target in the chamber and electrically isolated from the coaxial feed, and a second substrate spaced from the sputter target for defining a plasma volume between the substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.