Enhanced electromigration lifetime of metal interconnection lines
US5689139A · kind A · utility
29Cited by
11References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1995 |
| Grant date | Nov 18, 1997 |
| Priority date | — |
| Expiry date | Sep 11, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The electromigration lifetime of a metal interconnection line is increased by adjusting the length of the interconnection line or providing longitudinally spaced apart holes or vias to optimize the backflow potential capacity of the metal interconnection line. In addition, elongated slots are formed through the metal interconnection line so that the total width of metal across the interconnection line is selected for optimum electromigration lifetime in accordance with the Bamboo Effect for that metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.